ST STF33N60DM2

ST · FETs & Power MOSFETs · MPN STF33N60DM2

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Specifications

Gate Charge(Qg)43nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)87pF
Current - Continuous Drain(Id)24A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.87nF
TypeN-Channel

Technical details

600V 24A 5V 35W 130mΩ@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS

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