ST STF25N60M2-EP

ST · FETs & Power MOSFETs · MPN STF25N60M2-EP

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Specifications

Configuration-
Gate Charge(Qg)29nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)1.6pF
RDS(on)175mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.09nF

Technical details

18A 2V 30W 175mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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