ST STF24N65M2

ST · FETs & Power MOSFETs · MPN STF24N65M2

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)29nC@10V
Output Capacitance(Coss)47.5pF
Current - Continuous Drain(Id)16A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)1.65pF
RDS(on)230mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.06nF
TypeN-Channel

Technical details

N-Channel 650V 16A 30W Through Hole TO-220FPAB-3

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