ST STF23NM60ND

ST · FETs & Power MOSFETs · MPN STF23NM60ND

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Specifications

Drain to Source Voltage-
Gate Charge(Qg)70nC@10V
Current - Continuous Drain(Id)19.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)180mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.1nF

Technical details

19.5A 4V 150W 180mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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