ST STF21N65M5

ST · FETs & Power MOSFETs · MPN STF21N65M5

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Specifications

Gate Charge(Qg)50nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)46pF
Current - Continuous Drain(Id)17A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)190mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.95nF
Vgs±25V
TypeN-Channel

Technical details

N-Channel 650V 17A 30W Through Hole TO-220FP

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