ST · FETs & Power MOSFETs · MPN STF20NM65N-Y11
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| Gate Charge(Qg) | 44nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 10pF |
| RDS(on) | 270mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.28nF |
650V 15A 3V 125W 270mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS