ST STF18NM60N

ST · FETs & Power MOSFETs · MPN STF18NM60N

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Specifications

Gate Charge(Qg)35nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)285mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF

Technical details

600V 13A 4V 30W 285mΩ@10V 1 N-channel TO-220F-3 Single FETs, MOSFETs RoHS

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