ST STF18N65M2

ST · FETs & Power MOSFETs · MPN STF18N65M2

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Specifications

Gate Charge(Qg)20nC@520V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)330mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)770pF

Technical details

N-Channel 650V 12A 25W Through Hole TO-220FP

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