ST STF18N60M6

ST · FETs & Power MOSFETs · MPN STF18N60M6

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)16.8nC@10V
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3.25V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)280mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)650pF

Technical details

600V 13A 3.25V 25W 280mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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