ST STF18N60DM2

ST · FETs & Power MOSFETs · MPN STF18N60DM2

No reviews yet — be the first to review ST STF18N60DM2.

Specifications

Gate Charge(Qg)20nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.33pF
RDS(on)295mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)800pF

Technical details

N-Channel 600V 12A 25W Through Hole TO-220FP

Related FETs & Power MOSFETs