ST STF16N65M5

ST · FETs & Power MOSFETs · MPN STF16N65M5

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Specifications

Gate Charge(Qg)31nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)279mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.25nF
TypeN-Channel

Technical details

N-Channel 650V 12A Through Hole TO-220FP

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