ST STF16N60M6

ST · FETs & Power MOSFETs · MPN STF16N60M6

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Specifications

Gate Charge(Qg)16.7nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)3pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)575pF

Technical details

N-Channel 600V 12A 25W Through Hole TO-220FPAB-3

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