ST STF16N60M2

ST · FETs & Power MOSFETs · MPN STF16N60M2

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)38pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)320mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)700pF
TypeN-Channel

Technical details

600V 12A 4V 25W 320mΩ@10V 1 N-channel N-Channel TO-220F-3 Single FETs, MOSFETs RoHS

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