ST STF15NM65N

ST · FETs & Power MOSFETs · MPN STF15NM65N

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Specifications

Gate Charge(Qg)33.3nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)57pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation30W
Reverse Transfer Capacitance (Crss@Vds)4.5pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)983pF
TypeN-Channel

Technical details

N-Channel 650V 12A 30W Through Hole TO-220F-3

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