ST STF15N60M2-EP

ST · FETs & Power MOSFETs · MPN STF15N60M2-EP

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)340mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

600V 11A 4V 25W 340mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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