ST STF13N65M2

ST · FETs & Power MOSFETs · MPN STF13N65M2

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)430mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)590pF

Technical details

N-Channel 650V 10A 25W Through Hole TO-220FP

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