ST STF13N60DM2

ST · FETs & Power MOSFETs · MPN STF13N60DM2

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage600V
Current - Continuous Drain(Id)11A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)0.9pF
RDS(on)365mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)730pF

Technical details

600V 11A 4V 25W 365mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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