ST STF12NK65Z

ST · FETs & Power MOSFETs · MPN STF12NK65Z

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Specifications

Gate Charge(Qg)62.6nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)48.8pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.837nF
TypeN-Channel

Technical details

N-Channel 650V 10A 35W Through Hole TO-220FP

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