ST STF12N50M2

ST · FETs & Power MOSFETs · MPN STF12N50M2

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)33pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)380mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)560pF
TypeN-Channel

Technical details

N-Channel 500V 10A 85W Through Hole TO-220FP

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