ST STF11NM80

ST · FETs & Power MOSFETs · MPN STF11NM80

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Specifications

Gate Charge(Qg)43.6nC@10V
Drain to Source Voltage800V
Current - Continuous Drain(Id)11A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.63nF

Technical details

N-Channel 800V 11A 150W Through Hole TO-220FP

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