ST STF11NM60ND

ST · FETs & Power MOSFETs · MPN STF11NM60ND

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage-
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)5pF
RDS(on)450mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

10A 5V 90W 450mΩ@10V 1 N-channel TO-220FPAB-3 Single FETs, MOSFETs RoHS

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