ST STF11NM50N

ST · FETs & Power MOSFETs · MPN STF11NM50N

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)42pF
Current - Continuous Drain(Id)8.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)2pF
RDS(on)470mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)547pF
TypeN-Channel

Technical details

500V 8.5A 4V 25W 470mΩ@10V 1 N-channel N-Channel TO-220FPAB-3 Single FETs, MOSFETs RoHS

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