ST · FETs & Power MOSFETs · MPN STF11N65M5
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| Gate Charge(Qg) | 17nC@520V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 2.5pF |
| RDS(on) | 480mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 644pF |
650V 9A 3V 25W 480mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS