ST STF10NM60N

ST · FETs & Power MOSFETs · MPN STF10NM60N

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage650V
Output Capacitance(Coss)44pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.2pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)540pF
TypeN-Channel

Technical details

N-Channel 650V 10A 25W Through Hole TO-220FP

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