ST STF10NM50N

ST · FETs & Power MOSFETs · MPN STF10NM50N

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage500V
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)1.3pF
RDS(on)630mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)-

Technical details

500V 7A 4V 25W 630mΩ@10V 1 N-channel TO-220FP Single FETs, MOSFETs RoHS

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