ST STF10N65K3

ST · FETs & Power MOSFETs · MPN STF10N65K3

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Specifications

Drain to Source Voltage650V
Gate Charge(Qg)42nC@10V
Output Capacitance(Coss)125pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation35W
Reverse Transfer Capacitance (Crss@Vds)14pF
RDS(on)1Ω@10V
Number1 N-channel
Input Capacitance(Ciss)1.18nF
TypeN-Channel

Technical details

650V 10A 4.5V 35W 1Ω@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS

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