ST STF10N60DM2

ST · FETs & Power MOSFETs · MPN STF10N60DM2

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage600V
Output Capacitance(Coss)28pF
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)0.72pF
RDS(on)530mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)529pF
TypeN-Channel

Technical details

600V 8A 5V 25W 530mΩ@10V 1 N-channel N-Channel TO-220FP Single FETs, MOSFETs RoHS

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