ST STE88N65M5

ST · FETs & Power MOSFETs · MPN STE88N65M5

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Specifications

Gate Charge(Qg)204nC@10V
Drain to Source Voltage710V
Current - Continuous Drain(Id)88A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation494W
Reverse Transfer Capacitance (Crss@Vds)11pF
RDS(on)29mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)8.825nF

Technical details

710V 88A 4V 494W 29mΩ@10V 1 N-channel ISOTOP Single FETs, MOSFETs RoHS

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