ST STD9NM40N

ST · FETs & Power MOSFETs · MPN STD9NM40N

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage400V
Output Capacitance(Coss)30pF
Current - Continuous Drain(Id)5.6A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)2.3pF
RDS(on)790mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)365pF
TypeN-Channel

Technical details

400V 5.6A 4V 60W 790mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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