ST · FETs & Power MOSFETs · MPN STD9N65M2
No reviews yet — be the first to review ST STD9N65M2.
| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 10.3nC@10V |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| RDS(on) | 900mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 315pF |
| Type | N-Channel |
650V 5A 4V 60W 900mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS