ST STD9N65DM6AG

ST · FETs & Power MOSFETs · MPN STD9N65DM6AG

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Specifications

Gate Charge(Qg)11.7nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)36pF
Current - Continuous Drain(Id)9A
Gate Threshold Voltage (Vgs(th))4.75V
Pd - Power Dissipation89W
Reverse Transfer Capacitance (Crss@Vds)0.4pF
RDS(on)440mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)510pF
TypeN-Channel

Technical details

N-Channel 650V 9A 89W Surface Mount DPAK

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