ST STD9N40M2

ST · FETs & Power MOSFETs · MPN STD9N40M2

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Specifications

Gate Charge(Qg)8.8nC@10V
Drain to Source Voltage400V
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation60W
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)270pF

Technical details

400V 6A 2V 60W 800mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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