ST STD8N80K5

ST · FETs & Power MOSFETs · MPN STD8N80K5

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Specifications

Gate Charge(Qg)16.5nC@10V
Drain to Source Voltage800V
Output Capacitance(Coss)50pF
Current - Continuous Drain(Id)6A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)1pF
RDS(on)950mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)450pF
TypeN-Channel

Technical details

800V 6A 5V 110W 950mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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