ST STD8N65M5

ST · FETs & Power MOSFETs · MPN STD8N65M5

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)7A
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation70W
RDS(on)600mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)690pF
TypeN-Channel

Technical details

650V 7A 5V 70W 600mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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