ST STD8N60DM2

ST · FETs & Power MOSFETs · MPN STD8N60DM2

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Specifications

Gate Charge(Qg)13.5nC@480V
Drain to Source Voltage600V
Current - Continuous Drain(Id)8A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)0.89pF
RDS(on)550mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)449pF

Technical details

N-Channel 600V 8A 85W Surface Mount DPAK

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