ST · FETs & Power MOSFETs · MPN STD80N6F7
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 25nC@30V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 100W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | N-Channel |
60V 40A 4V 100W 8mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS