ST STD80N10F7

ST · FETs & Power MOSFETs · MPN STD80N10F7

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Specifications

Gate Charge(Qg)45nC
Drain to Source Voltage100V
Output Capacitance(Coss)700pF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation85W
Reverse Transfer Capacitance (Crss@Vds)45pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.1nF
TypeN-Channel

Technical details

N-Channel 100V 70A 85W Surface Mount DPAK

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