ST STD7NM80-1

ST · FETs & Power MOSFETs · MPN STD7NM80-1

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Specifications

Drain to Source Voltage800V
Gate Charge(Qg)18nC@10V
Output Capacitance(Coss)460pF
Current - Continuous Drain(Id)6.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)15pF
RDS(on)1.05Ω@10V
Number1 N-channel
Input Capacitance(Ciss)620pF
TypeN-Channel

Technical details

800V 6.5A 5V 90W 1.05Ω@10V 1 N-channel N-Channel TO-251(IPAK) Single FETs, MOSFETs RoHS

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