ST STD7NM60N

ST · FETs & Power MOSFETs · MPN STD7NM60N

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Specifications

Gate Charge(Qg)14nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)363pF
TypeN-Channel

Technical details

N-Channel 600V 5A 45W Surface Mount TO-252(DPAK)

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