ST STD7N65M2

ST · FETs & Power MOSFETs · MPN STD7N65M2

No reviews yet — be the first to review ST STD7N65M2.

Specifications

Gate Charge(Qg)9nC@10V
Drain to Source Voltage650V
Output Capacitance(Coss)14.5pF
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation60W
Reverse Transfer Capacitance (Crss@Vds)0.8pF
RDS(on)1.15Ω@10V
Number1 N-channel
Input Capacitance(Ciss)270pF
TypeN-Channel

Technical details

N-Channel 650V 5A 60W Surface Mount DPAK

Related FETs & Power MOSFETs