ST STD7ANM60N

ST · FETs & Power MOSFETs · MPN STD7ANM60N

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Specifications

Drain to Source Voltage600V
Gate Charge(Qg)14nC@10V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
Reverse Transfer Capacitance (Crss@Vds)1.1pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)363pF
TypeN-Channel

Technical details

N-Channel 600V 5A 45W Surface Mount DPAK

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