ST STD70N10F4

ST · FETs & Power MOSFETs · MPN STD70N10F4

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Specifications

Drain to Source Voltage100V
Gate Charge(Qg)190nC@10V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation125W
Reverse Transfer Capacitance (Crss@Vds)190pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.8nF

Technical details

N-Channel 100V 60A 125W Surface Mount DPAK(TO-252)

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