ST · FETs & Power MOSFETs · MPN STD6N65M2
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| Drain to Source Voltage | 650V |
|---|---|
| Gate Charge(Qg) | 9.8nC@10V |
| Output Capacitance(Coss) | 12.8pF |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 0.65pF |
| RDS(on) | 1.35Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 226pF |
| Type | N-Channel |
650V 4A 4V 60W 1.35Ω@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS