ST · FETs & Power MOSFETs · MPN STD6N60DM2
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| Drain to Source Voltage | 600V |
|---|---|
| Gate Charge(Qg) | 6.2nC@10V |
| Output Capacitance(Coss) | 15pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.75V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 2pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 274pF |
| Type | N-Channel |
600V 5A 4.75V 60W 1.1Ω@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS