ST STD65N55F3

ST · FETs & Power MOSFETs · MPN STD65N55F3

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Specifications

Gate Charge(Qg)45nC@27V
Drain to Source Voltage55V
Current - Continuous Drain(Id)80A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)8.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.2nF

Technical details

N-Channel 55V 80A 110W Surface Mount DPAK

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