ST · FETs & Power MOSFETs · MPN STD60NF55LAT4
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| Drain to Source Voltage | 55V |
|---|---|
| Gate Charge(Qg) | 56nC@5V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 110W |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| RDS(on) | 15mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.95nF |
| Type | N-Channel |
55V 60A 2V 110W 15mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS