ST STD60NF55LAT4

ST · FETs & Power MOSFETs · MPN STD60NF55LAT4

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)56nC@5V
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation110W
Reverse Transfer Capacitance (Crss@Vds)130pF
RDS(on)15mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.95nF
TypeN-Channel

Technical details

55V 60A 2V 110W 15mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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