ST STD5NM60T4

ST · FETs & Power MOSFETs · MPN STD5NM60T4

No reviews yet — be the first to review ST STD5NM60T4.

Specifications

Gate Charge(Qg)18nC@10V
Drain to Source Voltage650V
Current - Continuous Drain(Id)5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))5V
Pd - Power Dissipation96W
Reverse Transfer Capacitance (Crss@Vds)10pF
RDS(on)900mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)400pF

Technical details

N-Channel 5A 96W Surface Mount DPAK

Related FETs & Power MOSFETs