ST STD5NM50T4

ST · FETs & Power MOSFETs · MPN STD5NM50T4

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Specifications

Gate Charge(Qg)13nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)88pF
Current - Continuous Drain(Id)7.5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation100W
Reverse Transfer Capacitance (Crss@Vds)12pF
RDS(on)700mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)415pF
TypeN-Channel

Technical details

500V 7.5A 4V 100W 700mΩ@10V 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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