ST STD5N60M2

ST · FETs & Power MOSFETs · MPN STD5N60M2

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Specifications

Gate Charge(Qg)8.5nC@10V
Drain to Source Voltage600V
Current - Continuous Drain(Id)3.5A
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation45W
RDS(on)1.4Ω@10V
Number1 N-channel
Input Capacitance(Ciss)211pF

Technical details

600V 3.5A 4V 45W 1.4Ω@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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