ST STD5N52K3

ST · FETs & Power MOSFETs · MPN STD5N52K3

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Specifications

Gate Charge(Qg)17nC@10V
Drain to Source Voltage525V
Output Capacitance(Coss)-
Current - Continuous Drain(Id)4.4A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4.5V
Pd - Power Dissipation25W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)1.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

525V 4.4A 4.5V 25W 1.5Ω@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS

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